RF Device Modelling & Characterisation Engineer

Job Description

Key Responsibilities

• The core of modelling is high quality measurement data, the engineer must be proficient in performing On wafer characterisation of GaN devices, Pulsed DC-IVs, S-parameters up to 67GHz using a Vector Network Analyser.
• Perform On-wafer Active Load-Pull measurements to validate large-signal performance.
• Develop and implement advanced de-embedding and parasitic extraction techniques.
• Develop and maintain GaN HEMT compact device models for use in advanced GaN MMIC design, supporting both Keysight ADS and Cadence AWR Microwave Office EDA platforms.
• Develop and/or verify passive models in conjunction with Foundry available PDK models, performing 2.5D and 3D electromagnetic simulation.
• Develop advanced automated processes, including use of AI, for characterisation, extraction and modelling techniques for efficient delivery of GaN device models and other new available processes.
• Prepare detailed verification reports on GaN HEMT and passive models.
• Work closely with MMIC design team in assessing new fabrication processes and troubleshooting discrepancies between simulated and measured results.
• Lead by example to uphold a culture of ethics, accountability, and technical excellence .

Requirements/Qualifications

• Bachelor’s degree in Engineering (Electrical, RF, or related field) with 5+ years’ experience in RF/microwave testing and applications engineering.
• In-depth knowledge of RF device modelling and on-wafer characterisation.
• Familiarity with RF EDA tools such as Keysight ADS and Cadence AWR Microwave Office , and/or other 2.5D and 3D electromagnetic simulation, such as HFSS.
• Proficient in operating RF semiconductor test equipment: Probe Stations, Pulsed DC-IV, VNA, etc.
• Strong software skills for process automation using tools such as Python, MATLAB, or C.

Travel Time